gsot03c to gsot36c document number 85824 rev. 1.2, 29-apr-05 vishay semiconductors www.vishay.com 1 12 3 18070 esd protection diode array features ? transient protection for data lines as per iec 61000-4-2 (esd) 15 kv (air) 8 kv (con- tact) iec 61000-4-5 (lightning) see i ppm below ? devices have dual diodes, which can protect two unidirectional lines with pin 3 used as a common anode connection, or a single bidirectional line between pins 1 and 2. ? lead (pb)-free component ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec mechanical data case: sot-23 plastic case molding compound flammability rating: ul 94 v-0 terminals: high temperature soldering guaranteed: 260 c/10 sec. at terminals weight: approx. 8.8 mg packaging codes/options: gs18 - 10 k per 13 " reel (8 mm tape), 10 k/box gs08 - 3 k per 7 " reel (8 mm tape), 15 k/box absolute maximum ratings ratings at 25 c, ambient temperature unless otherwise specified 1) non-repetitive current pulse and derated above t a = 25 c, for gsot03c, gsot04c, the peak power dissipation is 270 w thermal characteristics ratings at 25 c, ambient temperature unless otherwise specified parameter test condition symbol value unit peak power dissipation 1) 8/20 s pulse p pk 300 w forward surge current 8.3 ms single half sine-wave i fsm 7a parameter test condition symbol value unit operation and storage temperature range t stg , t j - 55 to + 150 c e3
www.vishay.com 2 document number 85824 rev. 1.2, 29-apr-05 gsot03c to gsot36c vishay semiconductors electrical characteristics t j = 25 c unless otherwise noted 1) 8/20 s waveform used (see figure 2) typical characteri stics (tamb = 25 c unless otherwise specified) part number device marking code rated stand-off voltage minimum breakdown voltage maximum clamping voltage maximum pulse peak current maximum leakage current maximum capacitance pin 1-3 or 2-3 pin 1-3 or 2-3 pin 1-2 or 2-1 (pin 3 = nc) 1-2 or 2-1 (pin 3 = nc) pin 1-2 or 2-1 (pin 3 = nc) pin 1-3 or 2-3 pin 1-3 or 2-3 @ 1 ma @ i pp = 1 a 1) @ i pp = 5 a 1) t p = 8/20 s @ v wm @ 0 v, 1 mhz v wm v br v c i ppm i d c v v v a a pf gsot03c 03c 3.3 4.5 7.0 9.0 18 125 600 gsot04c 04c 4.0 5.0 8.5 10.5 17 125 600 gsot05c 05c 5.0 6.0 9.8 12.5 17 100 400 gsot08c 08c 8.0 8.5 13.4 15.0 15 10 350 gsot12c 12c 12.0 13.3 19.0 28.0 12 2 150 gsot15c 15c 15.0 16.7 24.0 35.0 10 1 100 gsot24c 24c 24.0 26.7 43.0 60.0 5 1 63 gsot36c 36c 36.0 40 60.0 75.0 2 1 60 figure 1. non -repetitive peak pulse power vs. pulse time p ppm - peak pulse power (w) 100 1000 10000 0.1 1.0 10 td - pulse duration ( s) 100 1000 10000 10 300w, 8/20 s waveshape 17476 iure 2.pulsewaveor 0 50 100 90 80 70 60 40 30 20 10 110 i ppm - peak pulse current, % i rsm pulse width (td) is defined as the point where the peak current decays to 50% of i ppm 0 10 5 15 20 30 25 t - time ( s) t d = i pp 2 17477
gsot03c to gsot36c document number 85824 rev. 1.2, 29-apr-05 vishay semiconductors www.vishay.com 3 package dimensions in mm (inches) figure 3. power derating t l - lead temperature c 0 20 40 60 80 100 % of rated power 0 50 25 75 100 125 150 average power peak pulse power 8/20 s 17478 2.0 (0.079) 0.9 (0.035) 0.95 (0.037) 0.95 (0.037) 0.52 (0.020) 1 2 3 17418 2.8 (.110) 3.1 (.122) 0.4 (.016) 0.95 (.037) 0.95 (.037) 0.1 (.004) max. 1.20(.047) 1.43 (.056) 0.4 (.016) 0.4 (.016) 0.098 (.005) 0.175 (.007) 0.95 (.037) 1.15 (.045) 2.35 (.092) 2.6 (.102) iso method e mounting pad layout
www.vishay.com 4 document number 85824 rev. 1.2, 29-apr-05 gsot03c to gsot36c vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate rele ases of those substances in to the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its po licy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not co ntain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buy er use vishay semiconductors products for any unintended or unauthorized application, the buyer sh all indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
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